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Metal-oxide semiconductor field-effect transistors (MOSFETs) are electronic switching devices with a conducting channel as the output. An electrode called a gate controls the width of the channel and determines how well the MOSFET conducts. Search by Specification | Learn More
Metal oxide varistors (MOV) are semiconductors that protect electronic components and systems from transient voltages. Search by Specification | Learn More
Complementary metal oxide semiconductor (CMOS) image sensors operate at lower voltages than CCDs, reducing power consumption for portable applications. Analog and digital processing functions can be integrated readily onto the CMOS chip, reducing system package size and overall cost. Search by Specification | Learn More
Complementary metal oxide semiconductor (CMOS) cameras use image sensors that operate at lower voltages than charged coupled devices (CCDs), reducing power consumption for portable applications. Each CMOS active pixel sensor cell has its own buffer amplifier, and can be addressed and read individually. Search by Specification | Learn More
RF MOSFET transistors are metal-oxide semiconductor field-effect transistors (MOSFETs) that are designed to handle high-power RF signals from devices such as stereo amplifiers, radio transmitters, TV monitors, etc. Search by Specification | Learn More
Gate drivers are electronic circuits that apply correct power levels to metal-oxide field-effect transistors (MOSFETs) and insulated gate bipolar transistors (IGBTs). Search by Specification | Learn More
Semiconductors (metalloids) or semiconductor materials are used to fabricate microelectronic and optoelectronic devices such as transistors, photodetectors or solar cells. Learn More
Fiber optic receivers are instruments that convert light into electrical signals. They contain a photodiode semiconductor, signal conditioning circuitry, and an amplifier. Search by Specification | Learn More
Fiber optic transmitters are devices that include an LED or laser source, and signal conditioning electronics, to inject a signal into fiber. Search by Specification | Learn More
...to output, and are characterized by a specific logic family. Common logic families include transistor-transistor logic (TTL), complementary metal-oxide semiconductor (CMOS), and emitter-coupled logic (ECL). Specifications for delay lines include delay... Search by Specification | Learn More
Semiconductor foundry services suppliers design and manufacture semiconductor chips on a contract basis, in prototype to production quantities. Search by Specification | Learn More
Oxide ceramics include alumina, zirconia, silica, aluminum silicate, magnesia and other metal oxide based materials. Search by Specification | Learn More
...family, complementary metal-oxide semiconductor (CMOS), uses a combination of P-type and N-type metal-oxide-semiconductor field effect transistors (MOSFETs) to implement logic gates and other digital circuits. Logic families for field-programmable... Search by Specification | Learn More
Fiber optic transceivers include both a transmitter and a receiver in the same component. Search by Specification | Learn More
...of the signal compression limits the subsequent color faithfulness. Low light cameras use several image sensing technologies. Charge coupled devices (CCDs) are light-sensitive silicon chips that detect electrons excited by incoming light. Complementary metal... Search by Specification | Learn More
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Industries Broadest Range of Discrete-Components American Microsemiconductor, Inc.
Vishay Siliconix’s TrenchFET® Gen III Power MOSFET Mouser Electronics, Inc.
CMOS Gate Arrays - Gate Arrays Universal Semiconductor, Inc.
CMOS Gate Arrays Universal Semiconductor, Inc.
IRFH7934TR2PBF N-channel 30V MOSFET Future Electronics
BiFET Amplifier (P Ch MOSFET Input & NPN Driver) Linear Integrated Systems, Inc.
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Metal Oxide Varistors (MOVs)
UL Certification for our GDT and MOV. http://database.ul.com/cgi-bin/XYV/template/LISEXT/1FRAME/showpage.html?name=XUHT2.E308899&ccnshorttitle=Transient+Voltage+Surge+Suppressors+-+Component&objid=1078477373&cfgid=1073741824&version=versionless&parent_id=1073806074&sequence=1 (read more)
The ROV series expands Raychem Circuit Protection's offering of circuit protection options and can offer the circuit board designer a complete overcurrent/overvoltage solution. (read more)
Rogue Valley Microdevices offers E-Beam Evaporation of metal stacks including but not limited to Ti, Cr, Ni, Ag, Au, and Pt. Our E-Beam Evaporation process provides excellent film thickness uniformity. Evaporation is done at low temperatures that will not damage photoresist for metal lift-off. Our process capabilities allow us to deposit up to six different materials in-situ. (read more)
Rogue Valley Microdevices offers Dry Thermal Oxide. Our ultra pure Dry Oxidation process is available for those applications requiring thinner oxides. We offer Chlorinated and Non-Clorinated Dry Thermal Oxide. Using Dry Chlorinated Thermal Oxide can help your devices perform to their highest potential by eliminating metal ions. (read more)
Rogue Valley Microdevices foundry can provide Sputtered Metals and Sputtered Dielectrics. Our sputtering capabilities include PVD Metals, PVD Dielectrics, and Evaporated Metals including but not limited to Copper, Aluminum, Silicon, Silicon Nitride, and Evaporated precious metals on wafers sizes 50mm to 300mm in diameter. (read more)
Rogue Valley Microdevices foundry can provide Sputtered Metals and Sputtered Dielectrics. Our sputtering capabilities include PVD Metals, PVD Dielectrics, and Evaporated Metals including but not limited to Copper, Aluminum, Silicon, Silicon Nitride, and Evaporated precious metals on wafers sizes 50mm to 300mm in diameter. (read more)
Rogue Valley Microdevices provides PVD Metals including sputtered Copper, sputtered Tantalum, sputtered Titanium, sputtered Tungsten, sputtered Nickel, sputtered Chrome, and sputtered Aluminum. Our process has an in-situ RF etch that ensures good film adhesion and Ohmic contact to conductive layers. We can provide the metal barrier layers and dielectric films on wafers sizes 50mm to 300mm. (read more)
Rogue Valley Microdevices foundry can provide Sputtered Metals and Sputtered Dielectrics. Our sputtering capabilities include PVD Metals, PVD Dielectrics, and Evaporated Metals including but not limited to Copper, Aluminum, Silicon, Silicon Nitride, and Evaporated precious metals on wafers sizes 50mm to 300mm in diameter. (read more)
Active solder joining of silicon and other semiconductors to metals, ceramics and composites for sensors, electronic packages and PV (solar) cells and modules. (read more)
Skyspring Nanomaterials, Inc. provides an extensive array of nanopowders of oxides, surface coated oxides, rare earth oxides, and others. (read more)
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CMOS - Wikipedia, the free encyclopedia also sometimes referred to as complementary-symmetry metal?oxide?semiconductor (or COS-MOS). The words "complementary-symmetry" refer to the fact |
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MOSFET - Wikipedia, the free encyclopedia The metal?oxide?semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a device used to amplify or switch electronic signals. |
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Dual-plane complementary metal oxide semiconductor invention Dual-plane complementary metal oxide semiconductor -> Monitor Keywords Dual-plane complementary metal oxide semiconductor |
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Method for manufacturing a complementary metal-oxide... Method for manufacturing a complementary metal-oxide semiconductor sensor -> Monitor Keywords |
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CMOS - MSN Encarta CMOS, die Abkürzung des englischen Ausdrucks Complementary Metal-Oxide Semiconductor (Komplementär-Metalloxid-Halbleiter). Der CMOS ist ein |
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Complementary Metal Oxide Semiconductor - Computing Reference... Complementary Metal Oxide Semiconductor Terms Containing Complementary Metal Oxide Semiconductor |
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Low-Power, Silicon-on-Insulator, Complementary Metal-Oxide... Low-Power, Silicon-on-Insulator, Complementary Metal-Oxide Semiconductor Receiver Chip Developed for Planetary Robotic and Distributed Sensor Network |
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UCLA Electrical Engineering Department his contributions to the development of integrated circuits for wireless communication in comple-mentary metal-oxide-semiconductor (CMOS) technology. |
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Polarization-Independent Photodetectors With Enhanced... Responsivity in a Standard Silicon-on-Insulator Complementary Metal–Oxide–Semiconductor Process |
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EDS Class of 2006 Fellows Chiao Tung University, Hsinchu, Taiwan for contributions to reliability in ultra-thin-oxide complementary metal oxide semiconductor (CMOS) devices See IEEE - Institute of Electrical and Electronics Engineers, Inc. Information |